IXYS Corporation 提供电源管理半导体产品 宁波磐瑞

从事功率半导体器件,混合信号集成电路,特殊应用集成电路,以及系统和无线电射频功率半导体器件设计

库存信息 / 2023-04-06 12:04:33 IXYS Corporation

IXYS Corporation艾赛斯半导体 是一家提供电源管理半导体产品以及全系列功率MOSFET、IGBT、双极和混合信号IC解决方案，可以为各种电源系统应用提高效率，降低能源成本。从事功率半导体器件,混合信号集成电路,特殊应用集成电路,以及系统和无线电射频功率半导体器件设计,开发,制造和营销。 艾赛斯半导体  IXYS是一家硅谷功率半导体公司，自一九八三年来一直致力于开发技术驱动型产品，IXYS提供种类齐全的大功率半导体产品，能够大功率应用需求。IXYS 有着过 2,500多家电信、运输、工业、医疗设备和消费电子公司的客户群，是半导体提供商。作为替代能源和再生能源行业，IXYS专注于将风能和太阳能转换为电能并接入美国电网所需功率半导体力的供应。 IXYS 及其附属公司提供各种各样的针对全球电源转换、电气效率和再生能源需求的产品组合。IXYS 提供功率金属氧化物半导体场效应晶体管 (MOSFET) 和绝缘栅双极晶体管（IGBT）。 IXYS 设计光学隔离式固态继电器、混合信号定制 ASIC 和 ASSP 集成电路。IXYS 的 LED 驱动器产品包括用于小、中、大型显示屏背光照明的电容型 DC-DC（充电泵）、电感型 DC-DC（升压) 和低压降线性 LED驱动器IC。近年来IXYS通过并购Zilog公司后推出了可实现数字电源管理和嵌入式控制的MCU，IXYS是早的功率半导体芯片供应商之一，控制风电向电网的高电压转换。IXYS是射频和微波分立半导体产品、GaA 肖特基二极管、MOSFET 驱动器 IC、无线放大器产品制造商


                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                         

IXFP10N60PIXYSTransistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
CMA30E1600PNIXYSThyristor; 1.6kV; Ifmax: 36A; 23A; Igt: 28/50mA; TO220FP; THT; tube
IXDD609SIIXYSIC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
DPF240X200NAIXYSModule: diode; double independent; 200V; If: 2x120A; SOT227B; screw
IXTK140N30PIXYSTransistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
IXDD609CIIXYSIC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
DSEP2X31-06BIXYSModule: diode; double independent; 600V; If: 2x30A; SOT227B; screw
IXFK64N60PIXYSTransistor: N-MOSFET; unipolar; 600V; 64A; 1040W; TO264
IXDI630MYIIXYSIC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
IXFT24N90PIXYSTransistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268
IXDD614YIIXYSIC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
IXFR80N50Q3IXYSTransistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
IXYH75N65C3H1IXYSTransistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
MEE95-06DAIXYSModule: diode; double series; 600V; If: 95A; TO240AA; Ufmax: 1.36V
MDD26-12N1BIXYSModule: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
IXTP24P085TIXYSTransistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO220AB
IXFN50N120SICIXYSModule; single transistor; 1.2kV; 30A; SOT227B; screw; 100nC; 26ns
IXYX30N170CV1IXYSTransistor: IGBT; XPT™; 1.7kV; 30A; 937W; PLUS247™
IXYA20N65C3D1IXYSTransistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
IXTK170N10PIXYSTransistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
IXFK80N65X2IXYSTransistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
IXTQ460P2IXYSTransistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
IXTP24N65X2IXYSTransistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
IXFN40N90PIXYSModule; single transistor; 900V; 33A; SOT227B; Ugs: ±40V; screw
IXFH60N50P3IXYSTransistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
IXDN604SIIXYSIC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
DSEI30-06AIXYSDiode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
IXTP140P05TIXYSTransistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
IXDI602SIAIXYSIC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
MMIX1T600N04T2IXYSTransistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
DPF60C300HBIXYSDiode: rectifying; THT; 300V; 2x30A; tube; Ifsm: 400A; TO247-3
IXBH16N170AIXYSTransistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
IXTP50N20PIXYSTransistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
IXTA20N65X2IXYSTransistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
IXDN604SIAIXYSIC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
DHG60I1200HAIXYSDiode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 360W
IXDN630CIIXYSIC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
CS19-08HO1IXYSThyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; TO220AB; THT; tube
IXYB82N120C3H1IXYSTransistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™
DPG30C300HBIXYSDiode: rectifying; THT; 300V; 2x15A; tube; Ifsm: 240A; TO247-3; 90W
IXFH26N50PIXYSTransistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
IXYH40N90C3D1IXYSTransistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
IXDN609CIIXYSIC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
IXFB82N60PIXYSTransistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
DHG30I600HAIXYSDiode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO247-2; 180W
IXTH6N50D2IXYSTransistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
IXTH68P20TIXYSTransistor: P-MOSFET; TrenchP™; unipolar; -200V; -68A; 568W; 245ns
IXFP72N30X3MIXYSTransistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP
IXTX210P10TIXYSTransistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
LDA210IXYSOptocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
IXDN609YIIXYSIC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
IXFN102N30PIXYSModule; single transistor; 300V; 86A; SOT227B; Ugs: ±30V; screw
VUO80-08NO1IXYSBridge rectifier: three-phase; Urmax: 800V; If: 80A; Ifsm: 600A
DSA70C100HBIXYSDiode: Schottky rectifying; THT; 100V; 2x35A; 160W; TO247-3; tube
IXFP36N20X3IXYSTransistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO220AB
MEK95-06DAIXYSModule: diode; common cathode; 600V; If: 95A; TO240AA; Ufmax: 1.36V
IXFH170N10PIXYSTransistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO247-3
IXTP32P20TIXYSTransistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
IXFH76N15T2IXYSTransistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO247-3; 69ns
IXFN80N50IXYSModule; single transistor; 500V; 80A; SOT227B; Ugs: ±40V; screw
IXFA12N50PIXYSTransistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
IXFP38N30X3MIXYSTransistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
IXFR24N90PIXYSTransistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
IXGH50N90B2D1IXYSTransistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
IXDN630YIIXYSIC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
DPG15I400PMIXYSDiode: rectifying; THT; 400V; 15A; tube; Ifsm: 190A; TO220FP-2; 35W
DSA60C45HBIXYSDiode: Schottky rectifying; THT; 45V; 2x30A; 160W; TO247-3; tube
IXFP26N30X3IXYSTransistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
DSI30-08AS-TUBIXYSDiode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
MCD200-16IO1IXYSModule: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
MDD26-14N1BIXYSModule: diode; double series; 1.4kV; If: 36A; TO240AA; Ufmax: 1.05V
IXBOD1-18RIXYSThyristor: BOD x2; 1.25A; BOD; THT; bulk; 1.8kV
IXTA32P05TIXYSTransistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO263
IXGH48N60C3D1IXYSTransistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
LOC110PIXYSOptocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
IXFH22N60P3IXYSTransistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
CMA80MT1600NHRIXYSTriac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
IXBH20N300IXYSTransistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
IXDD604SIIXYSIC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
IXFA56N30X3IXYSTransistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO263
IXFQ50N60P3IXYSTransistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
IXTP260N055T2IXYSTransistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
IXTH20N65XIXYSTransistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
VUO52-22NO1IXYSBridge rectifier: three-phase; Urmax: 2.2kV; If: 60A; Ifsm: 350A
IXDD609YIIXYSIC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
MCC44-16IO1BIXYSModule: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
IXFN210N30P3IXYSModule; single transistor; 300V; 192A; SOT227B; Ugs: ±30V; screw
DPG60C400HBIXYSDiode: rectifying; THT; 400V; 2x30A; tube; Ifsm: 360A; TO247-3; 160W
CS19-12HO1IXYSThyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
GUO40-12NO1IXYSBridge rectifier: three-phase; Urmax: 1.2kV; If: 40A; Ifsm: 370A
IXTH50P10IXYSTransistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
IXFK520N075T2IXYSTransistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
IXFR32N100PIXYSTransistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
IXTP24N65X2MIXYSTransistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
IXFN52N100XIXYSModule; single transistor; 1kV; 44A; SOT227B; Ugs: ±40V; screw; 830W
IXFK250N10PIXYSTransistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264
DPG20C300PNIXYSDiode: rectifying; THT; 300V; 2x10A; tube; Ifsm: 140A; TO220FP; 35W
CPC1333GRIXYSRelay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
CPC1302GIXYSOptocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
DSEK60-12AIXYSDiode: rectifying; THT; 1.2kV; 2x26A; tube; Ifsm: 200A; TO247-3; 125W
IXFH94N30P3IXYSTransistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO247-3
CMA30E1600PBIXYSThyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube
IXDI630MCIIXYSIC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
IXDN614CIIXYSIC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
IXFH22N50PIXYSTransistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
IXFN36N100IXYSModule; single transistor; 1kV; 36A; SOT227B; Ugs: ±30V; screw; 694W
IXDD630CIIXYSIC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
MCC162-12IO1IXYSModule: thyristor; double series; 1.2kV; 181A; Y4-M6; Ufmax: 1.36V
IXTP32P05TIXYSTransistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
IXFA3N120IXYSTransistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
IXXH30N60B3D1IXYSTransistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
IXFP4N100PIXYSTransistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
IXFA72N20X3IXYSTransistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263
IX4340NIXYSIC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
IXKN75N60CIXYSModule; single transistor; 600V; 50A; SOT227B; Ugs: ±20V; screw
IXDN609SIAIXYSIC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
VVZ40-16IO1IXYSBridge rectifier: half-controlled; Urmax: 1.6kV; If: 45A; module
DSEP2X25-12CIXYSModule: diode; double independent; 1.2kV; 2x25A; SOT227B; screw
DSA70C150HBIXYSDiode: Schottky rectifying; THT; 150V; 2x35A; 215W; TO247-3; tube
IXTP450P2IXYSTransistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
MCC72-16IO1BIXYSModule: thyristor; double series; 1.6kV; 116A; TO240AA; screw
IXFX210N30X3IXYSTransistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
CLA110MB1200NAIXYSModule: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
IX4427NTRIXYSIC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
DSEP15-06AIXYSDiode: rectifying; THT; 600V; 15A; tube; Ifsm: 110A; TO220AC; 95W
IXYH50N65C3H1IXYSTransistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
IXDN630MCIIXYSIC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
IXFH24N90PIXYSTransistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
IXFA130N15X3IXYSTransistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
IXTP4N80PIXYSTransistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
IXFH220N20X3IXYSTransistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
IXFT150N30X3HVIXYSTransistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
IXFT80N65X2HVIXYSTransistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
DSEC30-06BIXYSDiode: rectifying; THT; 600V; 2x15A; tube; Ifsm: 110A; TO247-3; 95W
MCC72-12IO1BIXYSModule: thyristor; double series; 1.2kV; 85A; TO240AA; Ufmax: 1.74V
MCD501-16IO2IXYSModule: diode-thyristor; 1.6kV; 503A; ComPack; Ifsm: 14.5kA; screw
VBO22-12NO8IXYSBridge rectifier: single-phase; Urmax: 1.2kV; If: 14A; Ifsm: 380A
LOC110SIXYSOptocoupler; SMD; OUT: photodiode; 3.75kV

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